Observation of Metastable Defect in Electron Irradiated 6H-SiC

Observation of Metastable Defect in Electron Irradiated 6H-SiC

著者名:

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

561

終了ページ:

564

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

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2 国際会議録 Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation Doyle, J. P., Aboelfotoh, M. O., Linnarsson, M. K., Svensson, B. G., Schoner, A., Nordell, N., Harris, C., Lindstrom, J. … MRS - Materials Research Society	8 国際会議録 Bound Exciton Recombination in Electron Irradiated 4H-SiC Egilsson,T., Henry,A., Ivanov,I.G., Lindstrom,J.L., Janzen,E. Trans Tech Publications
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