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Theory of Si-Rich SiC Surfaces:Consequences for Epitaxial Growth

著者名:
Purthmuller,J.
Kackeii,P.
Bechstedt,F.
Fissel,A.
Pfennighaus,K.
Schroter,B.
Richter,W.
さらに 2 件
掲載資料名:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
シリーズ名:
Materials science forum
シリーズ巻号:
264-268
発行年:
1998
巻:
Part1
開始ページ:
339
終了ページ:
342
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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SPIE-The International Society for Optical Engineering

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