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Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates

著者名:
Shim,H.W.
Kim,K.C.
Seo,Y.H.
Nahm,K.S.
Suh,E.-K.
Lee,H.J.
Hwang,Y.G.
さらに 2 件
掲載資料名:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
シリーズ名:
Materials science forum
シリーズ巻号:
264-268
発行年:
1998
巻:
Part1
開始ページ:
195
終了ページ:
198
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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