Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

著者名:

Muller,St.G.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

33

終了ページ:

36

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

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2 国際会議録 Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer,Mass Transport and Heat of Crystallization and Results on its Experimental … Muller,St.G., Eckstein,R., Hofmann,D., Kadinski,L., Kaufmann,P., Kolbl,M., Schmitt,E. Trans Tech Publications	8 国際会議録 Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth Muller, St. G., Fricke, J., Hofmann, D., Horn, R., Nilsson, O., Rexer, B. Trans Tech Publications
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4 国際会議録 Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC Muller, St. G., Hofmann, D., Winnacker, A. MRS-Materials Research Society	10 国際会議録 Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals Hofmann, D., Bickermann, M., Hartung, W., Winnacker, A. Trans Tech Publications
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