Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces

Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces

著者名:

Newman,R.C.

掲載資料名:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

シリーズ名:

Materials science forum

シリーズ巻号:

196-201

発行年:

1995

パート:

1

開始ページ:

425

終了ページ:

430

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020219
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	18th
会議開催地:	Sendai, Japan
会議開催年:	1995.07.23-1995.07.28

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