Blank Cover Image

Carbon Delta-Doping in GaAs and AlAs

著者名:
掲載資料名:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
シリーズ名:
Materials science forum
シリーズ巻号:
196-201
発行年:
1995
パート:
1
開始ページ:
409
終了ページ:
414
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Carbon Doping And Delta-Doping in GaAs, AlAs and AlGaAs

Davidson, B.R., Hart, L., Newman, R.C., Button, C.C., Joyce, T.B., Bullough, T.J.

Electrochemical Society
7 国際会議録 Carbon and Silicon Impurity Centers in GaAs

Newman,R.C.

Trans Tech Publications
2 国際会議録 Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C

Davidson,B.R., Newman,R.C., Pritchard,R.E., Robbie,D.A., Sangster,M.J.L., Wagner,J., Fischer,A., Ploog,K.

Trans Tech Publications
8 国際会議録 Si Diffusion out of ｦﾄ-Planes in a GaAs Superlattice

Hart,L., Fewster,P.F., Ashwin,M.J., Fahy,M.R., Newman,R.C.

Trans Tech Publications
3 国際会議録 Silicon Delta Doping in GaAs: An Ongoing Enigma

Newman, R. C., Ashwin, M. J., Wagner, J., Fahy, M. R., Hart, L., Holmes, S. N., Roberts, C.

MRS - Materials Research Society
9 国際会議録 HYDROGEN PASSIVATED CARBON ACCEPTORS IN GaAs AND AlAa: NO EVIDENCE FOR CARBON DONORS

Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., Oberg, S.

MRS - Materials Research Society
4 国際会議録 Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)

Newman,R.C., Grosche,E.G., Ashwin,M.J., Davidson,B.R., Robbie,D.A., Leigh,R.S., Sangster,M.J.L.

Trans Tech Publications
10 国際会議録 Positron Experiments in 5-Doped GaAs(Si)Superlattices:Defect Properties and Positron Diffusion

Laine,T., Saarinen,K., Hautojarvi,P., Corbel,C., Ashwin,M.J., Newman,R.C.

Trans Tech Publications
5 国際会議録 Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces

Newman,R.C., Ashwin,M.J., Fahy,M.R., Hart,L., Holmes,S.N., Roberts,C., Wagner,J.

Trans Tech Publications
11 国際会議録 Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers

Laine,T., Saarinen,K., Hautojarvi,P., Corbel,C., Pfeiffer,L.N., Citrin,P.H., Ashwin,M.J., Newman,R.C.

Trans Tech Publications
6 国際会議録 The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C., Davidson,B.R., Addinall,R., Murray,R., Emmert,J.W., Wagner,J., Gotz,W., Roos,G., Pensl,G.

Trans Tech Publications
12 国際会議録 Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs

Wagner,J., Ramsteiner,M., Murray,R., Newman,R.C.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12