Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices | 東京工業大学附属図書館文献データベース

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Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices

著者名:

Vanhellemont,J.

さらに 5 件

掲載資料名:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

シリーズ名:

Materials science forum

シリーズ巻号:

196-201

発行年:

1995

パート:

1

開始ページ:

371

終了ページ:

376

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020219
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	18th
会議開催地:	Sendai, Japan
会議開催年:	1995.07.23-1995.07.28

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2 国際会議録 Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays Ohyama,H., Vanhellemont,J., Simoen,E., Claeys,C., Takami,Y., Hayama,K., Sunaga,H., Poortmans,J., Caymax,M. Trans Tech Publications	8 国際会議録 Degradation and recovery of alpha ray irradiated MOSFETs on SIMOX Ohyama, H., Simoen, E., Claeys, C., Takami, Y., Kawamura, K., Hakata, T., Sunaga, H., Ogita, Y. Electrochemical Society
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