The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

著者名:

掲載資料名:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

シリーズ名:

Materials science forum

シリーズ巻号:

143-147

発行年:

1994

巻:

Pt.2

開始ページ:

963

終了ページ:

968

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020217
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS-17
回次:	17th
会議開催地:	Gmunden, Austria
会議開催年:	1993.07.18-1993.07.23

類似資料:

1 国際会議録 Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers McQuaid,S.A., Newman,R.C., Muhoz,E. Trans Tech Publications	7 国際会議録 ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW TEMPERATURES. TIPPING,A.K., NEWMAN,R.C., NEWTON,D.C., TUCKER,J.H. Trans Tech Publications
2 国際会議録 Vibrational absorption from oxygen-hydrogen(Oi-H2)complexes in hydrogeBated CZ silicon Pritchard,R.E., Ashwin,M.J., Newman,R.C., Tucker,J.H., Lightowlers,E.C., Binns,M.J., Falster,R., McQuaid,S.A. Trans Tech Publications	8 国際会議録 Measurements relating to the solubility of hydrogen in silicon at high temperatures McQuaid,S.A., Newman,R.C., Lightowlers,E.C. Trans Tech Publications
3 国際会議録 Measurements of the diffusion coefficient of hydrogen in silicon monitored by catalyzed enhanced oxygen diffusion jumps Newman,R.C., Tucker,J.H., McQuaid,S.A. Trans Tech Publications	9 国際会議録 OXYGEN CLUSTERING IN CZOCHRALSKI SILICON AT LOW TEMPERATURES: ENHANCED DIFFUSION OR SPATIAL CORRELATION? McQuaid, S.A., Johnson, B.K., Gambaro, D., Falster, R., Ashwin, M., Newman, R.C. Electrochemical Society
4 国際会議録 MEASUREMENTS OF ENHANCED OXYGEN DIFFUSION IN SILICON DURING THERMAL DONOR FORMATION: NEW EVIDENCE FOR POSSIBLE MECHANISMS Brown, A.R., Murray, R., Newman, R.C., Tucker, J.H. Materials Research Society	10 国際会議録 Thermal Donor Formation in Boron Doped Silicon Claybourn,M., Newman,R.C. Trans Tech Publications
5 国際会議録 Hydrogen Solubility and Defects in Silicon Binns,M.J., Newman,R.C., McQuaid,S.A., Lightowlers,E.C. Trans Tech Publications	11 国際会議録 Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure Emtsev,V.V., Oganesyan,G.A., Misiuk,A., Londos,C.A. SPIE-The International Society for Optical Engineering
6 国際会議録 Shailow thermal donors in annealed CZ silicon and links to the NL1O EPR spectrum:the reievance of H,Al and N imporities Newman,R.C., Ashwin,M.J., Pritcbard,R.E, Tucker,J.H., Lightowlers,E.C., Gregorkiewicz,T., Zevenbergen,I.S., … Trans Tech Publications	12 国際会議録 A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon Pajot,B., McQuaid,S., Newman,R.C., Song,C., Rahbi,R. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12