Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells

Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells

著者名:

Holtz,P.O.

掲載資料名:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

シリーズ名:

Materials science forum

シリーズ巻号:

143-147

発行年:

1994

巻:

Pt.1

開始ページ:

657

終了ページ:

662

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020217
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS-17
回次:	17th
会議開催地:	Gmunden, Austria
会議開催年:	1993.07.18-1993.07.23

類似資料:

1 国際会議録 EFFECTS OF CONFINEMENT ON THE OPTICAL PROPERTIES OF A SHALLOW ACCEPTOR AND ITS BOUND EXCITON IN NARROW GaAs/A1GaAs QUANTUM WELLS Holtz, P.O., Sundaram, M., Rune, G.C., Monemar, B., Merz, J.L., Gossard, A.C. Materials Research Society	7 国際会議録 Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells Bergman,J.P., Holtz,P.O., Monemar,B., Lindstrom,L., Sundaram,M., Gossard,A.C., Merz,J.L. Trans Tech Publications
2 国際会議録 MAGNETOOPTICAL STUDIES OF ACCEPTORS CONFINED IN GaAs/AlGaAs QUANTUM WELLS Holtz, P. O., Zhao, Q. X., Monemar, B., Pasquarello, A., Sundaram, M., Merz, J. L., Gossard, A. C. MRS - Materials Research Society	8 国際会議録 HOT-CARRIER EFFECTS ON OPTICAL PROPERTIES OF GaAs/A1xGa1-xAs QUANTUM WELLS Chen, W.M., Holtz, P.O., Monemar, B., Sundaram, M., Merz, J.L., Gossard, A.C. Materials Research Society
3 国際会議録 OPTICAL SPECTROSCOPY OF DEFECTS IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS Monemar, B., Holtz, P. O., Bergman, J. P., Zhao, Q. X., Harris, C. I., Ferreira, A. C., Sundaram, M., Merz, J. L., … MRS - Materials Research Society	9 国際会議録 INTRINSIC LUMINESCENCE OF GaAs/A1GaAs HETEROJUNCTIONS INA TRANSVERSE ELECTRIC FIELD Zhao, Q.X., Bergman, J.P., Holtz, P.O., Monemar, B., Hallin, C., Sundaram, M., Merz, J.L., Gossard, A.C. Materials Research Society
4 国際会議録 TIME RESOLVED MEASUREMENTS OF RADIATIVE RECOMBINATION IN GaAs/A1GaAs HETEROSTRUCTURES Bergman, J.P., Zhao, Q.X., Holtz, P.-O., Monemar, B., Sundaram, M., Merz, J.L., Gossard, A.C. Materials Research Society	10 国際会議録 DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS Bergman, J.P., Holtz, P.O., Monemar, B., Sundaram, M., Merz, J.L., Gossard, A.C. Materials Research Society
5 国際会議録 Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells Bergman,J.P., Holtz,P.O., Monemar,B., Sundaram,M., Merz,J.L., Gossard,A.C. Trans Tech Publications	11 国際会議録 Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells Monemar,B., Holtz,P.O., Harris,C.I., Bergman,J.P., Kalt,H., Sundaram,M., Merz,J.L., Gossard,A.C., Kohler,K., … Trans Tech Publications
6 国際会議録 Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells Harris,C.I., Monemar,B., Holtz,P.O., Sundaram,M., Merz,J.L., Gossard,A.C. Trans Tech Publications	12 国際会議録 INVESTIGATION OF BI-EXCITON FORMATION IN DOPED GaAsAlxGa(1-x)As QUANTUM WELLS Harris, C. I., Monemar, B., Holtz, P. O., Sundaram, M., Merz, J. L., Gossard, A. C. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12