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Strain Relaxation During Epitaxial Crystallization of Ge.Si1-x Alloy Layers Produced by Ion-Implantation

著者名:
掲載資料名:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
シリーズ名:
Materials science forum
シリーズ巻号:
143-147
発行年:
1994
巻:
Pt.1
開始ページ:
507
終了ページ:
512
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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