Lattice Properties of GaAs Layers Grown by MBE Method at Low Temperature
- 著者名:
- Leszczynski,M.
- 掲載資料名:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 143-147
- 発行年:
- 1994
- 巻:
- Pt.1
- 開始ページ:
- 371
- 終了ページ:
- 375
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
PHOTOELECTRONIC PROPERTIES OF LOW TEMPERATURE GaAs GROWN ON SILICON AND GaAs SUBSTRATES BY MBE
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
MRS-Materials Research Society |
Materials Research Society |
10
国際会議録
DLTS Study on Annealed Low-Temperature GaAs Layers with An n-l(LT)-n Structure Grown by MBE
MRS - Materials Research Society |
5
国際会議録
Dislocations and Traps in MBE-Grown Lattice-Mismatched p-InGaAs/GaAs Layers on GaAs substrates
MRS - Materials Research Society |
11
国際会議録
Generation of EL2-Level upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
Trans Tech Publications |
MRS - Materials Research Society |
Materials Research Society |