Blank Cover Image

Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C

著者名:
Davidson,B.R.
Newman,R.C.
Pritchard,R.E.
Robbie,D.A.
Sangster,M.J.L.
Wagner,J.
Fischer,A.
Ploog,K.
さらに 3 件
掲載資料名:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
シリーズ名:
Materials science forum
シリーズ巻号:
143-147
発行年:
1994
巻:
Pt.1
開始ページ:
247
終了ページ:
252
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)

Newman,R.C., Grosche,E.G., Ashwin,M.J., Davidson,B.R., Robbie,D.A., Leigh,R.S., Sangster,M.J.L.

Trans Tech Publications
7 国際会議録 Determination of the Bonding Configurations of Carbon Acceptors in InxGa1-xAs and AlxGa1-xAs

Pritchard, R. E., Newman, R. C., Wagner, J., Maier, M., Mazuelas, A., Ploog, K. H., Lane, P. A., Martin, T.

MRS - Materials Research Society
2 国際会議録 Carbon Delta-Doping in GaAs and AlAs

Hart,L., Davidson,B.R., Fernandez,J.M., Newman,R.C., Button,C.C.

Trans Tech Publications
8 国際会議録 Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs

Wagner,J., Ramsteiner,M., Murray,R., Newman,R.C.

Trans Tech Publications
3 国際会議録 Carbon Doping And Delta-Doping in GaAs, AlAs and AlGaAs

Davidson, B.R., Hart, L., Newman, R.C., Button, C.C., Joyce, T.B., Bullough, T.J.

Electrochemical Society
9 国際会議録 Carbon and Silicon Impurity Centers in GaAs

Newman,R.C.

Trans Tech Publications
4 国際会議録 Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces

Newman,R.C., Ashwin,M.J., Fahy,M.R., Hart,L., Holmes,S.N., Roberts,C., Wagner,J.

Trans Tech Publications
10 国際会議録 HYDROGEN PASSIVATED CARBON ACCEPTORS IN GaAs AND AlAa: NO EVIDENCE FOR CARBON DONORS

Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., Oberg, S.

MRS - Materials Research Society
5 国際会議録 The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C., Davidson,B.R., Addinall,R., Murray,R., Emmert,J.W., Wagner,J., Gotz,W., Roos,G., Pensl,G.

Trans Tech Publications
11 国際会議録 Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy

Wagner,J., Ramsteiner,M., Ashwin,M.J., Fahy,M.R., Newman,R.C., Braun,W., Ploog,K.

Trans Tech Publications
6 国際会議録 Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb

Addinall,R., Newman,R.C., Ferguson,I.T., Mohades-Kassai,A., Brozel,M.R., Sharma,V.K.M., McPhail,D., Sangster,M.J.L.

Trans Tech Publications
12 国際会議録 THE CONFINING POTENTIAL FOR CARRIERS IN PLANAR DOPED GaAs AND THE EFFECT OF PHOTOEXCITATION

Richards, D., Wagner, J., Ploog, K., Fischer, A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12