Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron
- 著者名:
Itoh,H. Yoshikawa,M. Nashiyama,I. Wei,L. Tanigawa,S. Misawa,S. Okumura,H. Yoshida,S. - 掲載資料名:
- Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 117-118
- 発行年:
- 1993
- 開始ページ:
- 501
- 終了ページ:
- 506
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496549 [0878496548]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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