Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

著者名:

Gotz,W.

掲載資料名:

Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992

シリーズ名:

Materials science forum

シリーズ巻号:

117-118

発行年:

1993

開始ページ:

495

終了ページ:

500

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496549 [0878496548]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020216
シリーズID:	PA00000012
会議名:	International Conference on Shallow Impurities in Semiconductors
回次:	5th
会議開催地:	Kobe, Japan
会議開催年:	1992.08.05-1992.08.08

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