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Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

著者名:
掲載資料名:
Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992
シリーズ名:
Materials science forum
シリーズ巻号:
117-118
発行年:
1993
開始ページ:
153
終了ページ:
158
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496549 [0878496548]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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