Blank Cover Image

Carbon and Silicon Impurity Centers in GaAs

著者名:
Newman,R.C.  
掲載資料名:
Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992
シリーズ名:
Materials science forum
シリーズ巻号:
117-118
発行年:
1993
開始ページ:
45
終了ページ:
52
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496549 [0878496548]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C., Davidson,B.R., Addinall,R., Murray,R., Emmert,J.W., Wagner,J., Gotz,W., Roos,G., Pensl,G.

Trans Tech Publications
7 国際会議録 Carbon Doping And Delta-Doping in GaAs, AlAs and AlGaAs

Davidson, B.R., Hart, L., Newman, R.C., Button, C.C., Joyce, T.B., Bullough, T.J.

Electrochemical Society
2 国際会議録 INVITED: OXYGEN AGGREGATION AND INTERACTIONS WITH CARBON AND HYDROGEN

Newman, R.C.

Electrochemical Society
8 国際会議録 Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy

Wagner,J., Ramsteiner,M., Ashwin,M.J., Fahy,M.R., Newman,R.C., Braun,W., Ploog,K.

Trans Tech Publications
3 国際会議録 A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon

Pajot,B., McQuaid,S., Newman,R.C., Song,C., Rahbi,R.

Trans Tech Publications
9 国際会議録 Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)

Newman,R.C., Grosche,E.G., Ashwin,M.J., Davidson,B.R., Robbie,D.A., Leigh,R.S., Sangster,M.J.L.

Trans Tech Publications
4 国際会議録 Carbon Delta-Doping in GaAs and AlAs

Hart,L., Davidson,B.R., Fernandez,J.M., Newman,R.C., Button,C.C.

Trans Tech Publications
10 国際会議録 Thermal Donor Formation in Boron Doped Silicon

Claybourn,M., Newman,R.C.

Trans Tech Publications
5 国際会議録 ELECTRONIC AND VIBRATIONAL ABSORPTION OF INTERSTITIAL CARBON IN SILICON.

WOOLLEY,R.A., LIGHTOWLERS,E.C., TIPPING,A.K., CLAYBOURN,M., NEWMAN,R.C.

Trans Tech Publications
11 国際会議録 On the Pairing between Indium and Carbon Atoms in Silicon

Ott,U., Wolf,H., Krings,Th., Wichert,Th., Haｦﾂlein,H., Sielemann,R., Deicher,M., Newman,R.C., Zulehner,W.

Trans Tech Publications
6 国際会議録 A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon

Chappell,S.P., Davies,G., Lightowlers,E.C., Newman,R.C.

Trans Tech Publications
12 国際会議録 Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers

Laine,T., Saarinen,K., Hautojarvi,P., Corbel,C., Pfeiffer,L.N., Citrin,P.H., Ashwin,M.J., Newman,R.C.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12