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Impurity photoconductivity in GexSi1-x epitaxial layers doped with phosphorus

著者名:
掲載資料名:
Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990
シリーズ名:
Materials science forum
シリーズ巻号:
65-66
発行年:
1991
開始ページ:
357
終了ページ:
362
出版情報:
Aedermannsdorf: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496198 [087849619X]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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