Blank Cover Image

CHARACTERIZATION OF DEEP LEVELS BY MICROWAVE ABSORPTION SPECTOROSCOPY.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part2
開始ページ:
521
終了ページ:
526
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Transient Microwave Absorption Spectroscopy｡ｦExperimental Verification

Wockinger,J., Jantsch,W., Ferenczi,G.

Trans Tech Publications
7 国際会議録 PRESSURE DEPENDENCE OF A DEEP EXCITONIC LEVEL IN SILICON

Northrop, G.A., Wolford, D.J.

Materials Research Society
2 国際会議録 Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps

Pavelka,T., Ferenczi,G.

Trans Tech Publications
8 国際会議録 Characterization of deep levels in oxygen-implanted silicon wafers by capacitance deep level transient spectroscopy

Kang, H.S., Ahn, C.G., Lee, S.H., Kim, K.I., Kang, B.K., Bae, Y.H., Kwon, Y.K.

Electrochemical Society
3 国際会議録 IDENTIFICATION OF THE CARBON ASSOCIATED RADIATION DAMAGE LEVELS IN SILICON.

FERENCZI,G., LONDOS,C.A., PAVELKA,T., SOMOGYI,M., MERTENS,A.

Trans Tech Publications
9 国際会議録 The Deep Boron Level in High-Voltage PiN Diodes

Aberg, D., Hallen, A., OEsterman, J., Zimmermann, U., Svensson, B.G.

Trans Tech Publications
4 国際会議録 Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

Deenapanray, P. N. K., Auret, F. D., Ridgway, M. C., Goodman, S. A., Myburg, G.

MRS - Materials Research Society
10 国際会議録 Intrinsic deep levels in semi-insulating silicon carbide

Mitchel, W.C., Mitchell, W.D., Landis, G.

SPIE - The International Society of Optical Engineering
5 国際会議録 DEEP LEVEL CHARACTERIZATION OF LP-MOCVD GROWN Al0.48In0.52As

Ducroquet, F., Guillot, G., Hong, K., Hong, C. H., Pavlidis, D., Gauneau, M.

MRS - Materials Research Society
11 国際会議録 Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

G. Alfieri, A. Mihaila, H.M. Ayedh, B.G. Svensson, P. Hazdra

Trans Tech Publications
6 国際会議録 CONSTANT PHOTO-EPR:A NEW METHOD FOR DEEP LEVEL CHARACTERIZATION

JANTSCH,W., BRUNTHALER,G., HENDOREFER,G.

Trans Tech Publications
12 国際会議録 Oxygen precipitation and denuded zone characterization with ELYMAT technique

Obermeier,G., Hage,J., Hilger,N., Huber,D.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12