Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors
- 著者名:
- Bremser,M.D. ( AIXTRON,Inc )
- Luenenbuerger,M.
- Protzmann,H.
- Heuken,M.
- 掲載資料名:
- Light-emitting diodes : research, manufacturing, and applications IV : 26-27 January 2000, San Jose, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3938
- 発行年:
- 2000
- 開始ページ:
- 100
- 終了ページ:
- 104
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819435552 [0819435554]
- 言語:
- 英語
- 請求記号:
- P63600/3938
- 資料種別:
- 国際会議録
類似資料:
MRS-Materials Research Society |
MRS - Materials Research Society |
2
国際会議録
Reproducibility and uniformity of MOVPE planetary reactors(R) for the growth of GaN based materials
MRS-Materials Research Society |
8
国際会議録
InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |