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ATOMIC SCALE INTERFACE STRUCTURE OF In0.2Ga0.8As/GaAs STRAINED LAYERS STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY

著者名:
掲載資料名:
Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
319
発行年:
1994
開始ページ:
111
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992184 [1558992189]
言語:
英語
請求記号:
M23500/319
資料種別:
国際会議録

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