GaN Homoepitaxy for Device Applications | 東京工業大学附属図書館文献データベース

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GaN Homoepitaxy for Device Applications

著者名:

Leszczynski, M.

さらに 4 件

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G10.2.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 GaN Based LEDs By MOVPE and MBE Kamp, M., Kirchner, C., Mayer, M., Pelzmann, A., Schauler, M., Schwegler, V., Unger, P., Ebeling, K.J. Electrochemical Society	7 国際会議録 Observation of Native Ga Vacancies in GaN by Positron Annihilation Saarinen, K., Laine, T., Kuisma, S., Nissila, J., Hautojarvi, P., Dobrzynski, L., Baranowski, J. M., Pakula, K., … MRS - Materials Research Society
2 国際会議録 Growth and Properties of Bulk Single Crystals of GaN Suski, T., Perlin, P., Leszczynski, M., Teisseyre, H., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., Pakula, K., … MRS - Materials Research Society	8 国際会議録 On Surface Cracking of Ammonia for MBE Growth of GaN Kamp, M., Mayer, M., Pelzmann, A., Ebeling, K. J. MRS - Materials Research Society
3 国際会議録 Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing Suski, T., Jun, J., Leszczynski, M., Teisseyre, H., Grzegory, I., Porowski, S., Baranowski, J. M., Rocket, A., Strite, … MRS - Materials Research Society	9 国際会議録 Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures IVANOV, V. YU., GODLEWSKI, M., TEISSEYRE, H., PERLIN, P., CZERNECKI, R., PRYSTAWKO, P., LESZCZYNSKI, M., GRZEGORY, I., … Kluwer Academic Publishers
4 国際会議録 Epitaxy on GaN bulk crystals Leszczynski,M., Prystawko,P., Czernecki,R., Lehnert,J., Perlin,P., Wisniewski,P., Skierbiszewski,Cz., Suski,T., … SPIE-The International Society for Optical Engineering	10 国際会議録 High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates Perlin, P., Leszczynski, M., Prystawko, P., Czernetzki, R., Wisniewski, P., Weyher, J.L., Nowak, G., Borysiuk, J., … SPIE - The International Society of Optical Engineering
5 国際会議録 GaN Crystals: Growth and Doping Under Pressure Grzegory, I., Bockowski, M., Lucznik, B., Wroblewski, M., Krukowski, S., Weyher, J., Nowak, G., Suski, T., Leszczynski, … MRS - Materials Research Society	11 国際会議録 Defect Studies of GaN Under Large Hydrostatic Pressure Wetzel, C., Fischer, S., Walukiewicz, W., Ager, J., III, Haller, E. E., Grzegory, I., Porowski, S., Suski, T. MRS - Materials Research Society
6 国際会議録 Luminescence of nonthermalized electron-hole plasma in GaN epilayers Jursenas,S., Kurilcik,G., Kurilcik,N., Tamulaitis,G., Kazlauskas,K., Zukauskas,A., Prystawko,P., Leszczynski,M., … SPIE-The International Society for Optical Engineering	12 国際会議録 Luminescence of Doped and Undoped Bulk Crystals of GaN Teisseyre,H., Suski,T., Perlin,P., Gorczyca,I., Leszczynsk,M., Grzegory,I., Jun,J., Porowski,S. Trans Tech Publications

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