Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
- 著者名:
Murphy, M. J. Foutz, B. E. Chu, K. Wu, H. Yeo, W. Schaff, W. J. Ambacher, O. Eastman, L. F. Eustis, T. J. Dimitrov, R. Stutzmann, M. Rieger, W. - 掲載資料名:
- GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 537
- 発行年:
- 1999
- 開始ページ:
- G8.4.1
- 出版情報:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994430 [1558994432]
- 言語:
- 英語
- 請求記号:
- M23500/537
- 資料種別:
- 国際会議録
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