Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys

Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys

著者名:

Muth, J. F.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G5.2.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society	7 国際会議録 MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues Rajagopal, Pradeep, Roberts, John C., Cook, J.W.Jr., Brown, J.D., Piner, Edwin L., Linthicum, Kevin J. Materials Research Society
2 国際会議録 Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3 Hughes, W. C., Rowland, W. H., Jr., Johnson, M. A. L., Cook, J. W., Jr., Schetzina, J. F. MRS - Materials Research Society	8 国際会議録 MBE Growth of III-V Nitride Thin Films and Quantum Well Structures Johnson,M.A.L., ,N.A.El-Masry Jr., J.W.Cook,Jr, Schetzina,J.F. Trans Tech Publications
3 国際会議録 Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society	9 国際会議録 LOW TEMPERATURE DEVICE PROCESSING TECHNOLOGY FOR II-VI SEMICONDUCTORS Dreifus, D.L., Kolbas, R.M., Sneed, B.P., Schetzina, J.F. Materials Research Society
4 国際会議録 Growth of Bulk AlN and GaN Single Crystals by Sublimation Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., Nemanich, R., Davis, R. F. MRS - Materials Research Society	10 国際会議録 MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma Sources Johnson, M. A. L., Yu, Zhonghai, Boney, C., Rowland, W. H., Jr., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., … MRS - Materials Research Society
5 国際会議録 A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications Johnson, M. A. L., Yu, Z., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., Jr., … MRS - Materials Research Society	11 国際会議録 Electric And Morphology Studies Of Ohmic Contacts On AlGaN/GaN Tilak, Vinayak, Dimitrov, R., Murphy, M., Green, B., Smart, J., Schaff, W.J., Shealy, J.R., Eastman, L.F. Materials Research Society
6 国際会議録 (Negative) Electron Affinity of AlN and AlGaN Alloys Nemanich, R. J., Benjamin, M. C., Bozeman, S. P., Bremser, M. D., King, S. W., Ward, B. L., Davis, R. F., Chen, B., … MRS - Materials Research Society	12 国際会議録 Structural and optical property invenstigation on Mg-alloying in exitaxial zinc oxide films on sapphire Sharma, A. K., Jin, C., Kvit, A., Narayan, J., Muth, J. F., Teng, C. W., Kolbas, R. M., Holland, O. W. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12