Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process | 東京工業大学附属図書館文献データベース

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Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

著者名:

Ibbetson, J. P.

DenBaars, S. P.

さらに 3 件

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G4.5.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 Maskless lateral epitaxial overgrowth of GaN on sapphire Fini, P., Marchand, H., Ibbetson, J. P., Moran, B., Zhao, L., DenBaars, S. P., Speck, J. S., Mishra, U. K. MRS-Materials Research Society	7 国際会議録 Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Hansen, M., Fini, P., Zhao, L., Abare, A., Coldren, L. A., Speck, J. S., DenBaars, S. P. MRS-Materials Research Society
2 国際会議録 Epitaxial lateral overgrowth of (1100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, H. Morkoç Society of Photo-optical Instrumentation Engineers	8 国際会議録 Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation Thompson, C., Stephenson, G.B., Eastman, J.A., Munkholnt, A., Auciello, O., Ramana Murty, M.V., Fini, P., DenBaars, … Electrochemical Society
3 国際会議録 Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction Zhao, L., Marchand, H., Fini, P., DenBaars, S. P., Mishra, U. K., Speck, J. S. MRS-Materials Research Society	9 国際会議録 Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry Yao, H., Yan, C. H., Jenkinson, H. A., Zavada, J. M., Speck, J. S., DenBaars, S. P. MRS - Materials Research Society
4 国際会議録 Electrical transport of an AlGaN/GaN two-dimensional electron gas Saxler, A., Debray, P., Perrin, R., Elhamri, S., Mitchel, W. C., Elsass, C. R., Smorckkova, I. P., Heying, B., Haus, E., … MRS-Materials Research Society	10 国際会議録 Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD X. Ni, U. Ozgur, H. Morkoc, A. A. Baski, Z. Liliental-Weber, H. O. Everitt SPIE - The International Society of Optical Engineering
5 国際会議録 Time-resolved photoluminescence studies of GaN,InGaN,and AlGaN grown by metalorganic chemical vapor deposition Cho,Y.-H., Gainer,G.H., Song,J.J., Keller,S.L., Mishra,U.K., DenBaars,S.P., Yang,W., McPherson,S.A. SPIE - The International Society for Optical Engineering	11 国際会議録 MOCVD Growth and Propertics of InGaN/GaN Multi-Quantum Wells Keller,S., Abare,A.C., Minsky,M.S., Wu,X.H., Mack,M.P., Speck,J.S., Hu,E., Coldren,L.A., Mishra,U.K., DenBaars,S.P. Trans Tech Publications
6 国際会議録 Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition X. Ni, Ü. Özgür, S. Chevtchenko, J. Nie, H. Morkoç Trans Tech Publications	12 国際会議録 Cleaved Facets in GaN by Water Fusion of GaN to InP Sink, R. K., Keller, S., Keller, B. P., Babic, D. I., Holmes, A. L., Kapolnek, D., Wu, X. H., Speck, J. S., Denbaars, S. … MRS - Materials Research Society

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