Enhanced GaN Decomposition at MOVPE Pressures

Enhanced GaN Decomposition at MOVPE Pressures

著者名:

Koleske, D. D.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.70.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

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1 国際会議録 The use of AlN interlayers to improve GaN growth on A-plane sapphire Koleske, D. D., Twigg, M. E., Wickenden, A. E., Henry, R. L., Gorman, R. J., Freitas, J. A. Jr., Fetami, M. MRS-Materials Research Society	7 国際会議録 High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3 Chaudhuri, J., Ng, M. Hooe, Koleske, D. D., Wickenden, A. E., Henry, R. L. MRS - Materials Research Society
2 国際会議録 GaN decomposition in ammonia Koleske, D. D., Wickenden, A. E., Henry, R. L. MRS-Materials Research Society	8 国際会議録 The Reaction of Oxygen with GaN(0001) Thoms, B. D., Bellitto, V. J., Yang, Y., Koleske, D. D., Wickenden, A. E., Henry, R. L. Trans Tech Publications
3 国際会議録 A Kinetic Model for GaN Growth Koleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J. MRS - Materials Research Society	9 国際会議録 Current-voltage characteristics of ungated AlGaN/GaN heterostructures Albrecht, J. D., Ruden, P. P., Binari, S. C., Ikossi-Anastasiou, K., Ancona, M. G., Henry, R. L., Koleske, D. D., … MRS-Materials Research Society
4 国際会議録 Microstructure of GaN Grown on (1120) Sapphire Ruterana, P., Wickenden, A. E., Twigg, M. E., Koleske, D. D., Henry, R. L., Tottereau, O. Materials Research Society	10 国際会議録 Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors Ruden, P. P., Albrecht, J. D., Sutandi, A., Binari, S. C., Ikossi-Anastasiou, K., Ancona, M. G., Henry, R. L., Koleske, … MRS - Materials Research Society
5 国際会議録 The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society	11 国際会議録 Adsorption and Desorption of Hydrogen on Ga-rich GaN(000l) Yang, Y., Bellitto, V. J., Thoms, B. D., Koleske, D. D., Wickenden, A. E., Henry, R. L. Trans Tech Publications
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