Blank Cover Image

Structure of AlN on Si (111) Deposited With Metalorganic Vapor Phase Epitaxy

著者名:
Rehder, E.
Zhou, M.
Zhang, L.
Perkins, N. R.
Babcock, S. E.
Kuech, T. F.
さらに 1 件
掲載資料名:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
537
発行年:
1999
開始ページ:
G3.56.1
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
言語:
英語
請求記号:
M23500/537
資料種別:
国際会議録

類似資料:

1 国際会議録 The Effect of Growth Temperature on the Microstructure of MOVPE AIN/Si(111)

Zhou, Mei, Perkins, N. R., Rehder, E., Kuech, T. F., Babcock, S. E.

MRS - Materials Research Society
7 国際会議録 Growth of Thick GaN Films by Halide Vapor Phase Epitaxy

Perkins, N.R., Horton, M.N., Matyi, R.J., Bandie, Z.Z., McGill, T.C., Kuech, T.F.

Electrochemical Society
2 国際会議録 Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

Safvi, S. A., Perkins, N. R., Horton, M. N., Thon, A., Zhi, D., Kuech, T. F.

MRS - Materials Research Society
8 国際会議録 Carbon and Hydrogen-Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor-Phase Epitaxy

Zhang, R., Kuech, T. F.

MRS - Materials Research Society
3 国際会議録 Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

Safvi, S. A., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
9 国際会議録 Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., Kuech, T. F.

MRS-Materials Research Society
4 国際会議録 Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F.

MRS - Materials Research Society
10 国際会議録 N-rich GaNAs With High As Content Grown by Metalorganic Vapor Phase Epitaxy

Kimura, Akitaka, Tang, H.F., Paulson, C.A., Kuech, T.R

Materials Research Society
5 国際会議録 Epitaxial Lateral Overgrowth of GaN With Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Zhang, R., Zhang, L., Hansen, D. M., Boleslawski, M. P., Chen, K. L., Lu, D. Q., Shen, B., Zheng, Y. D., Kuech, T. F.

MRS - Materials Research Society
11 国際会議録 The nature and impact of ZnO buffer layers on the initial stages of the hydride vapor phase epitaxy of GaN

Gu, S., Zhang, R., Sun, J., Zhang, L., Kuech, T. F.

MRS-Materials Research Society
6 国際会議録 High Resolution X-ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy

Matyi, R. J., Zhi, D., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
12 国際会議録 Incorporation of Er Into GaN by In Situ Doping During Halide Vapor-Phase Epitaxy

Zhang, Rong, Kuech, T. F.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12