Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

著者名:

Gehrke, T.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.2.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., Davis, R. F. Trans Tech Publications	7 国際会議録 Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., … MRS - Materials Research Society
2 国際会議録 Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., … MRS - Materials Research Society	8 国際会議録 *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., Mehregany, M. MRS-Materials Research Society
3 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F. MRS - Materials Research Society	9 国際会議録 Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Davis, R. F. MRS-Materials Research Society
4 国際会議録 Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates Davis, R. F., Nam, O-H., Zheleva, T. S., Bremser, M. D., Linthicum, K. J., Gehrke, T., Rajagopal, P., Thomson, D. B., … MRS - Materials Research Society	10 国際会議録 Characterization of Be-Implanted GaN Annealed at High Temperatures Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., Davis, R. F. MRS - Materials Research Society
5 国際会議録 Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F. MRS-Materials Research Society	11 国際会議録 Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F. MRS - Materials Research Society
6 国際会議録 Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films Davis, R. F., Nam, O. -H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., Rajagopal, P. Trans Tech Publications	12 国際会議録 Gallium Nitride Epitaxy on Silicon: Importance of Substrate Preparation Martin, G. A., Sverdlov, B. N., Botchkarev, A., Morkoc, H., Smith, D. J., Tsen, S. -C. Y., Thompson, W. H., Nayfeh, M. … MRS - Materials Research Society

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