Impact Excitation and auger Quenching Processes in Er-Doped Light-Emitting Si Devices

Impact Excitation and auger Quenching Processes in Er-Doped Light-Emitting Si Devices

著者名:

掲載資料名:

Materials and devices for silicon-based optoelectronics : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

486

発行年:

1998

開始ページ:

127

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993914 [1558993916]

言語:

英語

請求記号:

M23500/486

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019842
シリーズID:	PA00000011
会議名:	Symposium on materials and devices for silicon-based optoelectronics
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.03

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