Diffusion of Hydrogen in 6H Silicon Carbide

Diffusion of Hydrogen in 6H Silicon Carbide

著者名:

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

625

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

類似資料:

1 国際会議録 Channeled Implants in 6H Silicon Carbide Janson, M. S., Hallen, A., Godignon, P., Kuznetsov, A. Yu., Linnarsson, M. K., Morvan, E., Svensson, B. G. Trans Tech Publications	7 国際会議録 A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond M.K. Linnarsson, J. Isberg, A. Schöner, A. Hallén Trans Tech Publications
2 国際会議録 Doping of Silicon Carbide by Ion Implantation Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., … Trans Tech Publications	8 国際会議録 Aluminum and Boron Diffusion in 4H-SiC Linnarsson, M.K., Janson, M.S., Schoner, A., Svensson, B.G. Materials Research Society
3 国際会議録 Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation Doyle, J. P., Aboelfotoh, M. O., Linnarsson, M. K., Svensson, B. G., Schoner, A., Nordell, N., Harris, C., Lindstrom, J. … MRS - Materials Research Society	9 国際会議録 Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications
4 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications	10 国際会議録 Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC Linnarsson,M.K., Janson,M., Schoner,A., Nordell,N., Karlsson,S., Svensson,B.G. Trans Tech Publications
5 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications	11 国際会議録 Electrically Active Defects in n-Type 4H- and 6H-SiC Doyle,J.P., Aboelfotoh,M.O., Svensson,B.G. Trans Tech Publications
6 国際会議録 Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures Kuznetsov, A. Yu., Christensen, J. S., Linnarsson, M. K., Svensson, B. G., Radamson, H. H., Grahn, J., Landgren, G. MRS - Materials Research Society	12 国際会議録 Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen Achtziger, N., Hulsen, C., Janson, M. S., Linnarsson, M. K., Svensson, B. G., Witthuhn, W. Trans Tech Publications

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