TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN
- 著者名:
Ruvimov, S. Liliental-Weber, Z. Washburn, J. Duxstad, K. J. Haller, E. E. Fan, Z.-F. Mohammad, S. N. Kim, W. Botchkarev, A. E. Morkoc, H. - 掲載資料名:
- III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 423
- 発行年:
- 1996
- 開始ページ:
- 201
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993266 [1558993266]
- 言語:
- 英語
- 請求記号:
- M23500/423
- 資料種別:
- 国際会議録
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12
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Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
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