Silicidation Strategy of Sub-0.1 ｦﾌm Junctions for Deep Submicron Devices

Silicidation Strategy of Sub-0.1 ｦﾌm Junctions for Deep Submicron Devices

著者名:

掲載資料名:

Silicide thin films - fabrication, properties, and applications : Symposium held November 27-30, 1995, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

402

発行年:

1996

開始ページ:

245

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993051 [1558993053]

言語:

英語

請求記号:

M23500/402

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019834
シリーズID:	PA00000011
会議名:	Symposium on silicide thin films
回次:	1995
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.11.30

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