ENVIRONMENTAL EFFECT IN DX(Te)CENTERS IN GaAlAs.

ENVIRONMENTAL EFFECT IN DX(Te)CENTERS IN GaAlAs.

著者名:

掲載資料名:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

シリーズ名:

Materials science forum

シリーズ巻号:

10-12

発行年:

1986

巻:

Part1

開始ページ:

399

終了ページ:

404

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019743
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors - ICDS
回次:	14th
会議開催地:	Paris, France
会議開催年:	1986.08.18-1986.08.22

類似資料:

1 国際会議録 DX-like centres in semiconductors:metastability,bistability and negative-U Dobaczewski,L, Langer,JM Trans Tech Publications	7 国際会議録 Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress Li,M.-F., Yu,P.Y., Weber,E.R., Bauser,E., Hansen,W.L., Haller,E.E. Trans Tech Publications
2 国際会議録 Persistent Photoluminescence of DX-Centers in Gal-xAlxAs:Si Jantsch,W., Brunthaler,G., Ploog,K., Dmochowski,J.E., Langer,J.M. Trans Tech Publications	8 国際会議録 Trends in the Metastability of DX-Centers Schmidt,T.M., Fazzio,A., Caldas,M.J. Trans Tech Publications
3 国際会議録 Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs Kaczor,P., Zyikiewicz,Z.R., Dobaczewski,L., Godlewski,M., Mandray,A., Huant,S., Portal,J.-C. Trans Tech Publications	9 国際会議録 TRAPPING CHARACTERISTICS AND ANALYSIS OF Te-RELATED DX CENTERS IN AlGaAs and GaAsP. MUNOZ,E., GOMEZ,A., CALLEJA,F., CRIADO,J.J., HERRERO,J.M., SANDOVAL,F. Trans Tech Publications
4 国際会議録 Coexistence of deep and shallow paramagnetic excited states of the DX center in GaAlAs Bardeleben,H.J.von, Sheinkmann,M., Delerue,C., Lannoo,M. Trans Tech Publications	10 国際会議録 EFFECT OF THE HOST BAND STRUCTURE ON CAPTURE AND EMISSION PROCESSES AT DX CENTERS IN AlGaAs. MOONEY,P.M., CALLEJA,E., WRIGHT,S.L., HEIBLUM,M. Trans Tech Publications
5 国際会議録 Laplace transform DLTS studies of the DX centers in GaSb and AlGaAs Dobaczewski,L., Hawkins,I.D., Kaczor,P., Missous,M., Poole,I., Peaker,A.R. Trans Tech Publications	11 国際会議録 Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds Langer,J.M. Trans Tech Publications
6 国際会議録 MANIFESTATION OF THE DX CENTRE IN HEAVILY δ-DOPED GaAs(Si) Arscott, S., Missous, M., Dobaczewski, L., Harness, P.C., Maude, D.K., Portal, J.C. Materials Research Society	12 国際会議録 ELECTRIC FIELD ENHANCEMENT OF ELECTRON EMISSION FROM DX CENTERS AND CONSEQUENCES Bourgoin, J.C., Zazoui, M., Feng, S.L., von Bardeleben, H.J., Alaya, S., Maaref, H. Materials Research Society

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