Blank Cover Image

AsGa-Asi-AsGa COMPLEX AS A MODEL OF EL2 CENTRE IN GaAs.

著者名:
FIGIELSKI,T.  
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part1
開始ページ:
341
終了ページ:
346
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 *EL2 AND THE ELECTRONIC STRUCTURE OF THE AsGa-Asi PAIR IN GaAs: THE ROLE OF JAHN-TELLER RELAXATION

Baraff, G. A., Lannoo, M., Schluter, M.

Materials Research Society
7 国際会議録 Studies of the DX Centre in Heavily Doped n+GaAs

Eaves L., Portal C. J., Maude K. D., Foster J. T.

Plenum Press
2 国際会議録 EL2 and the Electronic Structure of the AsGa-Asi Pair in GaAs:the Role of Jahn-Teller Relaxation and Coulomb Interaction

Baraff,G.A., Schluter,M., Lannoo,M.

Trans Tech Publications
8 国際会議録 ERS INTERFEROMETRIC PRODUCTS DEVELOPMENT AT ASI-SPACE GEODESY CENTRE

Lopinto, E., Telespazio, Nuova, Marzo, C.

ESA Publications Division
3 国際会議録 EPR SPECTRA OF AsGa AGGREGATES IN GaAs.

KACZMAREK,E.

Trans Tech Publications
9 国際会議録 PHOTO-EPR AND SPATIALLY RESOLVED EPR OF AsGa IN As-GROWN GaAs

Baeumler, M., Kaufmann, U., Windscheif, J.

Materials Research Society
4 国際会議録 Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2

Bittebierre,J., Cox,R.T., Picard,R., Molva,E.

Trans Tech Publications
10 国際会議録 A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs

Ge,W., Jiang,D., Song,Ch., Zheng,J.

Trans Tech Publications
5 国際会議録 HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2

Skowronski, M., Lin, D. G., Lagowski, J., Pawlowicz, L..M., Ko, K. Y., Gatos, H. C.

Materials Research Society
11 国際会議録 5.2 Normal forms on centre manifolds

Faria, T.

Springer
6 国際会議録 Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs

Hausmann,H., Ehrhart,P.

Trans Tech Publications
12 国際会議録 Circuit implementation of a theoretical model of trap centres in GaAs and GaN devices

J. G. Rathmell, A. E. Parker

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12