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Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices

著者名:
Lin,F. ( Motorola )
De Souza,R. ( Motorola )
Dynes,R. ( Motorola )
Lu,S. ( Chemical and Surface Analytical Labs. )
Schay,P. ( Motorola )
Grizzard,L. ( Motorola )
Plutino,T. ( Motorola )
Welches,D. ( Motorola )
さらに 3 件
掲載資料名:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II :23-24 September 1998 Santa Clara, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3509
発行年:
1998
開始ページ:
154
終了ページ:
161
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780081942963 [0081942968]
言語:
英語
請求記号:
P63600/3509
資料種別:
国際会議録

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