Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation
- 著者名:
- Cacciato,A. ( Philips Semiconductors (Netherlands) )
- Schumbera,P. ( Philips Semiconductors (Netherlands) )
- Heessels,A. ( Philips Semiconductors (Netherlands) )
- Luchies,I.R.M. ( Philips Semiconductors (Netherlands) )
- Swaving,M. ( CQM (Netherlands) )
- 掲載資料名:
- In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II :23-24 September 1998 Santa Clara, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3509
- 発行年:
- 1998
- 開始ページ:
- 115
- 終了ページ:
- 124
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780081942963 [0081942968]
- 言語:
- 英語
- 請求記号:
- P63600/3509
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
8
国際会議録
Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
North-Holland |
MRS - Materials Research Society |
Electrochemical Society |
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