Blank Cover Image

Wide Band Gap Semiconductors. Good Results and Great Expectations

著者名:
Shur S. M.  
掲載資料名:
Future trends in microelectronics : reflections on the road to nanotechnology
シリーズ名:
NATO ASI series. Series E, Applied sciences
シリーズ巻号:
323
発行年:
1996
開始ページ:
279
終了ページ:
290
総ページ数:
12
出版情報:
Dordrecht: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792341697 [0792341694]
言語:
英語
請求記号:
N11482/323
資料種別:
国際会議録

類似資料:

1 国際会議録 III-Nitride Power Devices - Good Results and Great Expectations

Shur, M.S., Gaska, R., Khan, A.

Trans Tech Publications
7 国際会議録 Two-photon spectroscopy of free-carrier generation in wide-band gap crystals

Klimentov,S.M., Garnov,S.V., Epifanov,A.S., Manenkov,A.A., Sagatelyan,D.M.

SPIE-The International Society for Optical Engineering
2 国際会議録 Exciton tunneling in wide-band-gap semiconductors

Ten,S.Y., Henneberger,F., Rabe,M., Peyghambarian,N.

SPIE-The International Society for Optical Engineering
8 国際会議録 Electrochromic Devices Based on Wide Band-Gap Nanocrystalline Semiconductors Functionalized with Polynuclear Mixed Valence Compounds

M. Biancardo, C.A. Bignozzi

Society of Vacuum Coaters
3 国際会議録 Shaping of the band gap in AllnGaN alloys

Tamulaitis,G., Jursenas,S., Kazlauskas,K., Zukauskas,A., Khan,M.Asif, Yang,J.W., Simin,G.S., Gaska,R., Shur,M.S.

SPIE-The International Society for Optical Engineering
9 国際会議録 Valence-Band Offset at the Zn-P Interface Between ZnSe and III-V Wide Gap Semiconductor Alloys: A First-Principles Investigation

Bernardini, F., Nieminen, R. M.

MRS - Materials Research Society
4 国際会議録 Wide Band Gap Semiconductor Technology for Energy Efficiency

A. Agarwal, W.J. Sung, L. Marlino, P. Gradzki, J. Muth

Trans Tech Publications
10 国際会議録 Study of Electrical Transport Across Interfaces Between Wide-Gap Semiconductor and Metal Oxides

Talyansky, V., Vispute, R. D., Sharma, R. P., Choopun, S., Downes, M. J., Venkatesan, T., Iliadis, A. A., Wood, M. C., …

MRS - Materials Research Society
5 国際会議録 Theory of Defects in Wide-Band-Gap Semiconductors

Walle, Chris G. Van de, Neugebauer, Jorg

MRS - Materials Research Society
11 国際会議録 Inducing Magnetism in Wide Band Gap Hosts

Seshadri, Ram, Risbud, Aditi S., Lawes, Gavin

Materials Research Society
6 国際会議録 Optoelectronic Devices from Wide Band Gap ?-? Semiconductors

Bhargava N R

Plenum Press
12 国際会議録 ON THE BURSTEIN-MOSS SHIFT IN QUANTUM CONFINED WIDE-BAND GAP SEMICONDUCTORS

Ghatak, Kamakhya, Badal De

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12