MBE growth and characterization of composite InAlAs/In(Ga)As vertically aligned quantum dots

MBE growth and characterization of composite InAlAs/In(Ga)As vertically aligned quantum dots

著者名:

掲載資料名:

Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

571

発行年:

2000

開始ページ:

109

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994782 [1558994785]

言語:

英語

請求記号:

M23500/571

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019435
シリーズID:	PA00000011
会議名:	Semiconductor Quantm Dots : Symposium
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

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