Thermal stability of Ir/TaN electrode/Barrier on thin gate oxide for MFMOS one transistor memory application

Thermal stability of Ir/TaN electrode/Barrier on thin gate oxide for MFMOS one transistor memory application

著者名:

Zhang, Fengyan

掲載資料名:

Ferroelectric thin films VIII : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

596

発行年:

2000

開始ページ:

67

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995048 [1558995048]

言語:

英語

請求記号:

M23500/596

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019433
シリーズID:	PA00000011
会議名:	Ferroelectric Thin Films : Symposium
回次:	8th
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.02

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