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*Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

著者名:
掲載資料名:
Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
607
発行年:
2000
開始ページ:
491
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995154 [1558995153]
言語:
英語
請求記号:
M23500/607
資料種別:
国際会議録

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