INITIAL STAGE OF HETEROEPITAXIAL GROWTH OF SiC ON Si BY GAS SOURCE MBE USING HYDROCARBON RADICALS

INITIAL STAGE OF HETEROEPITAXIAL GROWTH OF SiC ON Si BY GAS SOURCE MBE USING HYDROCARBON RADICALS

著者名:

掲載資料名:

Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

318

発行年:

1994

開始ページ:

201

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992177 [1558992170]

言語:

英語

請求記号:

M23500/318

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019388
シリーズID:	PA00000011
会議名:	Symposium on interface control of electrical, chemical, and mechanical properties
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.03

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