RELATIONSHIP BETWEEN INTERFACE STRUCTURE AND SCHOTTKY BARRIER HEIGHT

RELATIONSHIP BETWEEN INTERFACE STRUCTURE AND SCHOTTKY BARRIER HEIGHT

著者名:

掲載資料名:

Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

318

発行年:

1994

開始ページ:

3

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992177 [1558992170]

言語:

英語

請求記号:

M23500/318

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019388
シリーズID:	PA00000011
会議名:	Symposium on interface control of electrical, chemical, and mechanical properties
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.03

類似資料:

1 国際会議録 CoSi2/Si(111) INTERFACE STRUCTURE AND ITS INFLUENCE ON THE SCHOTTKY BARRIER Sullivan, J. P., Graham, W. R., Schrey, F., Eaglesham, D. J., Kola, R., Tung, R. T. MRS - Materials Research Society	7 国際会議録 Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping Tung, R. T., Schrey, F. MRS - Materials Research Society
2 国際会議録 *SINGLE CRYSTAL NiSi2/Si INTERFACES: FABRICATION, STRUCTURES, AND SCHOTTKY BARRIER HEIGHTS Tung, R. T., Sullivan, J. P., Schrey, F., Levi, A. F. J. Materials Research Society	8 国際会議録 Barrier Height and Fermi Level Pinning at Schottky Interfaces Patel,K.D., Modi,B.P., Srivastava,R. Narosa Publishing House
3 国際会議録 THE FABRICATION OF NiSi2/Si(100) INTERFACES WITH CONTROLLED MORPHOLOGIES Sullivan, J.P., Tung, R.T., Schrey, F., Graham, W.R. Materials Research Society	9 国際会議録 TOPOGRAPHY OF Si (111): CLEAN SURFACE PREPARATION AND SILICON MOLECULAR BEAM EPITAXY Tung, R.T., Schrey, F., Eaglesham, D.J. Materials Research Society
4 国際会議録 GROWTH OF SINGLE CRYSTAL Si/NiSi2/Si(100) AND SiCoSi2/Si(100) STRUCTURES BY MOLECULAR BEAM EPITAXY AND FURNACE ANNEALING Tung, R.T., Eaglesham, D.J., Schrey, F., Sullivan, J.P. Materials Research Society	10 国際会議録 GROWTH AND EPITAXIAL CoSi2 AND NiSi2 ON (111), (100) AND (110) Si AT ROOM TEMPERATURE Tung, R.T., Schrey, F. Materials Research Society
5 国際会議録 Epitaxial NiSi2 and CoSi2 Interfaces Tung T. R., Levi J. F. A., Schrey F., Anzlowar M. Plenum Press	11 国際会議録 *EPITAXIAL SILICIDES: A SUMMARY OF RECENT DEVELOPMENTS Tung, R.T., Schrey, F. Materials Research Society
6 国際会議録 SCHOTTKY BARRIER HEIGHTS AT SINGLE CRYSTAL METAL SEMICONDUCTOR INTERFACES Tung, R. T. Materials Research Society	12 国際会議録 *EFFECT OF Si AND Ge INTERFACE LAYERS ON THE SCHOTTKY BARRIER HEIGHT OF METAL CONTACTS TO GaAs Waldrop, J. R., Grant, R. W. Materials Research Society

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