ELECTRONIC STRUCTURE OF SHORT-PERIOD ZnSe/ZnTe SUPERLATTICES GROWN BY MOVPE AT 300｡ｬC | 東京工業大学附属図書館文献データベース

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ELECTRONIC STRUCTURE OF SHORT-PERIOD ZnSe/ZnTe SUPERLATTICES GROWN BY MOVPE AT 300｡ｬC

著者名:

Aulombard, R. L.

さらに 5 件

掲載資料名:

Thin films : stresses and mechanical properties IV : symposium held April 12-16, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

308

発行年:

1993

開始ページ:

461

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992047 [1558992049]

言語:

英語

請求記号:

M23500/308

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019387
シリーズID:	PA00000011
会議名:	Symposium on thin films: stresses and mechanical properties
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.16

類似資料:

1 国際会議録 THE INFLUENCE OF TELLURIUM INTERDIFFUSION ON THE OPTICAL PROPERTIES OF MOVPE-GROWN ZnSe-ZnTe SUPERLATTICES Aulombard, R. L., Briot, O., Briot, N., Cloitre, T., Gil, B., Sallese, J. M., Gailhanou, M., Bonard, J. M. MRS - Materials Research Society	7 国際会議録 EXPLANATION OF OBSERVED P-TYPED CONDUCTIVITY IN MOVPE ZnSe/GaAs HETEROSTRUCTURES Briot, O., Cloitre, T., Tempier, N., Sauvezon, R., Averous, M., Aulombard, R. L. Materials Research Society
2 国際会議録 PLASMA ASSISTED NITROGEN DOPING OF ZnSe GROWN BY MOVPE Cloitre, T., Briot, O., Briot, N., Gil, B., Aulombard, R. L. MRS - Materials Research Society	8 国際会議録 OPTICAL PROPERTIES OF LIGHT-HOLE EXCITONS IN MOVPE GROWN (Ga,In)As-GaAs QUANTAM WELLS Bigenwald, P., Laire, O., Zhang, X., Briot, O., Gil, B., Cloitre, T., Aulombard, R. L. MRS - Materials Research Society
3 国際会議録 Optical Properties and Electronic Structure of ZnSe-Based Heterostructures Grown by Low Temperature MOVPE(invited) Cloitre,T., Briot,N., Briot,O., Gil,B., Aulombard,R.L. Trans Tech Publications	9 国際会議録 Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts O. Briot, N. Briot, T. Cloitre, R.L. Aulombard, F. Liaci Society of Photo-optical Instrumentation Engineers
4 国際会議録 DEPENDENCE ON MOVCD GROWTH TEMPERATURE OF THE PHOTOLUMINESCENCE PROPERTIES OF ZnSe, ZnTe,AND ZnSe(1-X)Te(X) ALLOYS AND ZnSe/ZnTe SUPERLATTICES Ponga, B. E., Calas, J., Averous, M, Cloitte, T., Briot, O., Gil, B., Aulombard, R. L. Materials Research Society	10 国際会議録 Lattice Strain and Band Offsets Determination in ZnSe/ZnS Short-Period Superlattices Grown by MOVPE on(100)GaAs Prete,P., Lovergine,N., Cingolani,R., Mancini,A.M. Trans Tech Publications
5 国際会議録 MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF HIGH-QUALITY ZnSe-ZnS SUPERLATTICES USING A NOVEL ZINC ADDUCT PRECURSOR Briot, O., Blasio, M. Di, Cloitre, T., Briot, N., Bigenwald, P., Gil, B., Averous, M., Aulombard, R. L., Smith, L. M., … MRS - Materials Research Society	11 国際会議録 High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications Moret, M., Ruffenach, S., Briot, O., Gil, B., Aulombard, R. L. Materials Research Society
6 国際会議録 Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices B. Gil, M. Di Blasio, T. Cloitre, P. Bigenwald, L. Aigouy Society of Photo-optical Instrumentation Engineers	12 国際会議録 Growth Kinetics and Structural Quality in GaN Epitaxy by Low Pressure MOVPE Briot, O., Alexis, J. P., Gil, B., Aulombard, R. L. MRS - Materials Research Society

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