Low-Temperature ECR-Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices

Low-Temperature ECR-Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices

著者名:

Hassan, Z.

掲載資料名:

Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

536

発行年:

1999

開始ページ:

245

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994423 [1558994424]

言語:

英語

請求記号:

M23500/536

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019383
シリーズID:	PA00000011
会議名:	Symposium on microcrystalline and nanocrystalline semiconductors
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.03

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