A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18ｦﾌm CMOS Devices

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18ｦﾌm CMOS Devices

著者名:

掲載資料名:

Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

525

発行年:

1998

開始ページ:

313

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994317 [1558994319]

言語:

英語

請求記号:

M23500/525

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019382
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

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