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Evaluation and Comparison of 3.0nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs

著者名:
Yee, K. F.
Osburn, C. M.
Masnari, N. A.
Hauser, J. R.
Parker, C. G.
Lucovsky, G.
Henson, W. K.
Wortman, J. J.
Kippenberg, T.
Kuerschner, S.
さらに 5 件
掲載資料名:
Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
525
発行年:
1998
開始ページ:
157
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994317 [1558994319]
言語:
英語
請求記号:
M23500/525
資料種別:
国際会議録

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