Vacancies in Electron Irradiated 6H-SiC

Vacancies in Electron Irradiated 6H-SiC

著者名:

掲載資料名:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

442

発行年:

1997

開始ページ:

625

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

言語:

英語

請求記号:

M23500/442

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019374
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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2 国際会議録 Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation Dannefaer, S., Avalos, V., Syvajarvi, M., Yakimova, R. Trans Tech Publications	8 国際会議録 Positron Annihilation in Electron Irradiated Silicon Mascher,P., Dannefaer,S., Kerr,D. Trans Tech Publications
3 国際会議録 EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC Bratus', V.Ya., Makeeva, I.N., Okulov, S.M., Petrenko, T.L., Petrenko, T.T., von Bardeleben, H.J. Trans Tech Publications	9 国際会議録 Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC Barthe, M. F., Henry, L., Arpiainen, S., Blondiaux, G. Trans Tech Publications
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