The Differences Between the InyGa1-yAs/GaAs Interface and GaAs/InyGa1-yAs Interface in Superlattice over a InxGa1-xAs(x<y) Buffer Layer
- 著者名:
Wang, X. J. Zheng, L. X. Xiao, Z. B. Zhang, Z. P. Hu, X. W. Wang, Q. M. - 掲載資料名:
- Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 442
- 発行年:
- 1997
- 開始ページ:
- 541
- 出版情報:
- Pittsburgh, Penn: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993464 [1558993460]
- 言語:
- 英語
- 請求記号:
- M23500/442
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
MRS - Materials Research Society |
Electrochemical Society |
4
国際会議録
An i-InGaP/n-InxGa1-xAs/i-GaAs Step-Compositioned Doped-Channel Field-Effect Transistor (SCDCFET)
Electrochemical Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
12
国際会議録
GROWTH OF GaAs, InxGa1-xAs, AND AlxGa1-xAs ON GaAs(111)B SUBSTRATES BY MOLECULAR BEAM EPITAXY
Materials Research Society |