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S-Doped GaInAs Grown by Chemical Beam Epitaxy: Electrical and Structural Characterization

著者名:
掲載資料名:
Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
442
発行年:
1997
開始ページ:
523
出版情報:
Pittsburgh, Penn: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993464 [1558993460]
言語:
英語
請求記号:
M23500/442
資料種別:
国際会議録

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