Residual Impurities and Transport Properties of High Purity MOVPE GaAs

Residual Impurities and Transport Properties of High Purity MOVPE GaAs

著者名:

Steude, G.

掲載資料名:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

442

発行年:

1997

開始ページ:

399

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

言語:

英語

請求記号:

M23500/442

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019374
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 OPTICAL AND CYCLOTRON RESONANCE INVESTIGATIONS ON GaInP/GaAs EPITAXIAL LAYERS Emanuelsson, P., Drechsler, M., Hofmann, D. M., Meyer, B. K., Moser, M., Scholz, F. MRS - Materials Research Society	7 国際会議録 Optical Investigations of AlGaN on GaN Epitaxial Films Steude, G., Christmann, T., Meyer, B. K., Goeldner, A., Hoffmann, A., Bertram, F., Christen, J., Amano, H., Akasaki, I. MRS - Materials Research Society
2 国際会議録 2.2 eV Luminescence in GaN Hofmann, D. M., Kovalev, D., Steude, G., Volm, D., Meyer, B. K., Xavier, C., Monteiro, T., Pereira, E., Mokov, E. N., … MRS - Materials Research Society	8 国際会議録 Use of Nitrogen As The Ambient in The L.P.-MOVPE of III/V's Hardtdegen, H. Electrochemical Society
3 国際会議録 NEW GROUP III PRECURSORS FOR THE MOVPE OF GaAs AND InP BASED MATERIAL Hostalek, M., Pohl, L., Brauers, A., Balk, P., Frese, V., Hardtdegen, H., Hovel, R., Regel, G. K., Molassioti, A., … Materials Research Society	9 国際会議録 Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth D.G. Shin, H.R. Son, S. Heo, B.S. Kim, J.E. Han Trans Tech Publications
4 国際会議録 *ENDOR SPECTROSCOPY ON DEEP LEVEL DEFECTS IN GaAs Spaeth, J. -M., Gorger, A., Hofmann, D. M., Meyer, B. K. Materials Research Society	10 国際会議録 Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO RODINA, A.V., STRASSBURG, M., DWORZAK, M., HABOECK, U., HOFFMANN, A., ALVES, H. R., ZEUNER, A., HOFMANN, D. M., MEYER, … Springer
5 国際会議録 Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations Meyer, B. K., Hofmann, D. M., Volm, D., Chen, W. M., Son, N. T., Janzen, E. Trans Tech Publications	11 国際会議録 Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AlGaAs Deenapanray, P.N.K., Krispin, M., Meyer, W.E., Tan, H.H., Jagadish, C., Auret, F.D. Materials Research Society
6 国際会議録 Effects of damage-impurity interaction on electrical properties of Se+-implanted GaAs Sadana, D.K., Washburn, J., Strathman, D., Booker, G.R., Badawi, M.H. North Holland	12 国際会議録 INFLUENCE OF IMPURITIES ON MECHANISMS OF GROWTH IN MOVPE GaAs Nayak, S., Redwing, J. M., Huang, J. W., Lagally, M. G., Kuech, T. F. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12