Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs | 東京工業大学附属図書館文献データベース

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Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs

著者名:

Deenapanray, P. N. K.

Masterson, H. J.

Beechinor, J. T.

さらに 5 件

掲載資料名:

Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

442

発行年:

1997

開始ページ:

51

出版情報:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993464 [1558993460]

言語:

英語

請求記号:

M23500/442

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019374
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 Electrical characterization of defects introduced during plasma-based processing of GaAs Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E., Deenapanray,P.N.K., Murtagh,M., Ye,S.-R., Masterson,H.J., … Trans Tech Publications	7 国際会議録 Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment Deenapanray,P.N.K., Auret,F.D., Myburg,G., Meyer,W.E., Goodman,S.A. Trans Tech Publications
2 国際会議録 Optical and Electrical Characterization Study of SiCl4 Reactive-Io-Etched GaAs Murtagh, M., Ye, Shu-Ren, Masterson, H. J., Beechinor, J. T., Crean, G. M., Auret, F. D., Deenapanray, P. N. K., Mayer, … MRS - Materials Research Society	8 国際会議録 Optical and Electrical Characterisation of Plasma Processed n-GaAs Murtagh, M., Herbert, P. A. F., Kelly, P. V., Crean, G. M. MRS - Materials Research Society
3 国際会議録 Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs Murtagh,M., Hildebrandt,S., Herbert,P.A.F., O'Connor,G.M., Crean,G.M., Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E. Trans Tech Publications	9 国際会議録 Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs Atsret,F.D., Goodman,S.A., Meyer,W.E., Erasmus,R.M., Myburg,G. Trans Tech Publications
4 国際会議録 Electronic Properties of Defects Formed in n-Si During Sputter-Etching in an Ar Plasma Deenapanray, P. N. K., Auret, F. D., Schutte, C., Myburg, G., Meyer, W. E., Malherbe, J. B., Ridgway, M. C. MRS - Materials Research Society	10 国際会議録 Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy Deenapanray, P. N. K., Auret, F. D., Ridgway, M. C., Goodman, S. A., Myburg, G. MRS - Materials Research Society
5 国際会議録 Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex Mamor,M., Auret,F.D., Goodman,S.A., Myburg,G., Deenapanray,P.N.K., Meyer,W.E. Trans Tech Publications	11 国際会議録 Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AlGaAs Deenapanray, P.N.K., Krispin, M., Meyer, W.E., Tan, H.H., Jagadish, C., Auret, F.D. Materials Research Society
6 国際会議録 Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures Deenapanray,P.N.K., Auret,F.D., Myburg,G., Hayes,M., Meyer,W.E., Schutte,C. Trans Tech Publications	12 国際会議録 Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation F.D. Auret, W.E. Meyer, M. Diale, P.J. Janse Van Rensburg, S.F. Song Trans Tech Publications

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